SPC58EN80C3RMSBY datasheet(37/158 Pages) STMICROELECTRONICS

部品番号	SPC58EN80C3RMSBY

部品情報	32-bit Power Architecture microcontroller for automotive ASIL-D applications

PDF	158 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

Logo

37 / 158 page

DS11734 Rev 6

37/158

SPC584Nx, SPC58ENx, SPC58NNx

Electrical characteristics

IDYN_S

Dynamic I/O current for

STRONG configuration

CL =25 pF, VDD =5.0 V ±

10%

——

CL =50 pF, VDD =5.0 V ±

10%

—

63.5

CL =25 pF, VDD =3.3 V ±

10%

——

CL =50 pF, VDD =3.3 V ±

10%

—

33.5

IDYN_V

Dynamic I/O current for VERY

STRONG configuration

CL =25 pF, VDD =5.0 V ±

10%

——

CL =50 pF, VDD =5.0 V ±

10%

——

CL =25 pF, VDD =3.3 V ±

10%

——

CL =50 pF, VDD =3.3 V ±

10%

——

1. I/O current consumption specifications for the 4.5 V

≤ VDD_HV_IO ≤ 5.5 V range are valid for VSIO_[VSIO_xx] = 1, and

VSIO[VSIO_xx] = 0 for 3.0 V

≤ VDD_HV_IO ≤ 3.6 V.

2. Average consumption in one pad toggling cycle.

3. Stated maximum values represent peak consumption that lasts only a few ns during I/O transition. When possible (timed

output) it is recommended to delay transition between pads by few cycles to reduce noise and consumption.

Table 17. I/O consumption (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

SPC58EN80C3RMSBY データシート(PDF) 37 Page - STMicroelectronics

SPC58EN80C3RMSBY データシート(HTML) 37 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

データシートダウンロード