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JS28F256P30T85 データシート(PDF) 31 Page - Intel Corporation

部品番号 JS28F256P30T85
部品情報  Intel StrataFlash Embedded Memory
PDF  102 Pages
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メーカー  INTEL [Intel Corporation]
ホームページ  http://www.intel.com
Logo INTEL - Intel Corporation

JS28F256P30T85 データシート(HTML) 31 Page - Intel Corporation

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1-Gbit P30 Family
Datasheet
Intel StrataFlash® Embedded Memory (P30)
April 2005
Order Number: 306666, Revision: 001
31
6.0
Electrical Specifications
6.1
DC Current Characteristics
Table 12. DC Current Characteristics (Sheet 1 of 2)
Sym
Parameter
CMOS
Inputs
(VCCQ =
1.7 V - 3.6 V)
TTL Inputs
(VCCQ =
2.4 V - 3.6 V)
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
ILI
Input Load Current
-
±1
-
±2
µA
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or VSS
1
ILO
Output
Leakage
Current
DQ[15:0], WAIT
-
±1
-
±10
µA
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or VSS
ICCS,
ICCD
VCC Standby,
Power Down
64-Mbit
203520
35
µA
VCC = VCCMax
VCCQ = VCCQMax
CE# = VCCQ
RST# = VCCQ (for ICCS)
RST# = VSS (for ICCD)
WP# = VIH
1,2
128-Mbit
30
75
30
75
256-Mbit
55
115
55
200
512-Mbit
110
230
110
400
1-Gbit
220
460
220
800
ICCR
Average
VCC
Read
Current
Asynchronous Single-
Word f = 5 MHz (1 CLK)
14
16
14
16
mA
1-Word
Read
VCC = VCCMax
CE# = VIL
OE# = VIH
Inputs: VIL or VIH
1
Page-Mode Read
f = 13 MHz (5 CLK)
910
9
10
mA
4-Word
Read
Synchronous Burst
f = 40 MHz
13
17
n/a
n/a
mA
BL = 4W
15
19
n/a
n/a
mA
BL = 8W
17
21
n/a
n/a
mA
BL = 16W
21
26
n/a
n/a
mA
BL = Cont.
ICCW,
ICCE
VCC Program Current,
VCC Erase Current
36
51
36
51
mA
VPP = VPPL, pgm/ers in progress
1,3,4,7
26
33
26
33
VPP = VPPH, pgm/ers in progress 1,3,5,7
ICCWS,
ICCES
VCC Program
Suspend Current,
VCC Erase
Suspend Current
64-Mbit
203520
35
µA
CE# = VCCQ; suspend in
progress
1,3,6
128-Mbit
30
75
30
75
256-Mbit
55
115
55
200
512-Mbit
110
230
110
400
1-Gbit
220
460
220
800
IPPS,
IPPWS,
IPPES
VPP Standby Current,
VPP Program Suspend Current,
VPP Erase Suspend Current
0.2
5
0.2
5
µA
VPP = VPPL, suspend in progress
1,3
IPPR
VPP Read
2
15
2
15
µA
VPP ≤ VCC
1,3



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