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TX58TEGXDDKTAX0 データシート(PDF) 72 Page - Toshiba Semiconductor |
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TX58TEGXDDKTAX0 データシート(HTML) 72 Page - Toshiba Semiconductor |
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72 / 121 page ![]() TOSHIBA CONFIDENTIAL Tx58TEGxDDKTAx0 TENTATIVE 2013-07-10C 71 TC58TEG6DDKTA00 / TC58TEG6DDKTAI0 TH58TEG7DDKTA20 / TH58TEG7DDKTAK0 TH58TEG8DDKTA20 / TH58TEG8DDKTAK0 5.2.13. Reset Operation Toggle DDR1.0 NAND offers a reset function by command FFh. When the device is in ’Busy’ state during any operation, the Reset operation will abort these operations. The contents of memory cells being programmed are no longer valid, as the data will be partially programmed or erased. Reset during the operation with a cache register (e.g. Cache Program operation) may not just stop the most recent page operation but it may also stop the previous page operation depending on when the FF reset is input. Although the device is already in process of reset operation, a new reset command will be accepted. Figure 55 defines the Reset behavior and timings. Figure 55. Reset timing When Reset (FFh) command is input during Program operation Figure 56. Reset timing during Program operation When Reset (FFh) command is input during Erase operation Figure 57. Reset timing during Erase operation When Reset (FFh) command is input during Read operation Figure 58. Reset timing during Read operation |
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