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TX58TEGXDDKTAX0 データシート(PDF) 72 Page - Toshiba Semiconductor

部品番号 TX58TEGXDDKTAX0
部品情報  Semiconductor & Storage Products
PDF  121 Pages
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TX58TEGXDDKTAX0 データシート(HTML) 72 Page - Toshiba Semiconductor

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TOSHIBA CONFIDENTIAL
Tx58TEGxDDKTAx0
TENTATIVE 2013-07-10C
71
TC58TEG6DDKTA00 / TC58TEG6DDKTAI0
TH58TEG7DDKTA20 / TH58TEG7DDKTAK0
TH58TEG8DDKTA20 / TH58TEG8DDKTAK0
5.2.13. Reset Operation
Toggle DDR1.0 NAND offers a reset function by command FFh. When the device is in ’Busy’ state during any
operation, the Reset operation will abort these operations. The contents of memory cells being programmed are no
longer valid, as the data will be partially programmed or erased. Reset during the operation with a cache register
(e.g. Cache Program operation) may not just stop the most recent page operation but it may also stop the previous
page operation depending on when the FF reset is input. Although the device is already in process of reset
operation, a new reset command will be accepted. Figure 55 defines the Reset behavior and timings.
Figure 55. Reset timing
When Reset (FFh) command is input during Program operation
Figure 56. Reset timing during Program operation
When Reset (FFh) command is input during Erase operation
Figure 57. Reset timing during Erase operation
When Reset (FFh) command is input during Read operation
Figure 58. Reset timing during Read operation



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