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TX58TEGXDDKTAX0 データシート(PDF) 11 Page - Toshiba Semiconductor |
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TX58TEGXDDKTAX0 データシート(HTML) 11 Page - Toshiba Semiconductor |
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11 / 121 page ![]() TOSHIBA CONFIDENTIAL Tx58TEGxDDKTAx0 TENTATIVE 2013-07-10C 10 TC58TEG6DDKTA00 / TC58TEG6DDKTAI0 TH58TEG7DDKTA20 / TH58TEG7DDKTAK0 TH58TEG8DDKTA20 / TH58TEG8DDKTAK0 • Access time Cell array to register TBD µs max TBD µs typ. Data Transfer rate 100 MHz • Program/Erase time Auto Page Program TBD µs/page typ. Auto Block Erase TBD ms/block typ. • Operating current Read TBD mA max. (per 1 chip) Program (avg.) TBD mA max. (per 1 chip) Erase (avg.) TBD mA max. (per 1 chip) • Reliability Refer to APPLICATION NOTES AND COMMENTS. 1.4. Diagram Legend Diagrams in the Toggle DDR1.0 datasheet use the following legend: Command This legend shows the command data. Refer to the Table 31 for more information about the command data. Address C1 C2 R1 R2 R3 This legend shows the Address data. The addresses are comprised of 2 cycles column address and 3 cycles row address. C1: Column address 1 C2: Column address 2 R1: Row address 1 R2: Row address 2 R3: Row address 3 W-Data This legend shows Host writing data (data input) to the device. R-Data This legend shows Host reading data (data output) from the device. SR[x] This legend shows Host reading the status register within a particular LUN. |
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