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H8SX/1663M データシート(PDF) 1485 Page - Renesas Technology Corp |
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H8SX/1663M データシート(HTML) 1485 Page - Renesas Technology Corp |
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1485 / 1504 page ![]() Main Revisions and Additions in this Edition Rev. 2.00 Sep. 24, 2008 Page 1453 of 1468 REJ09B0412-0200 Item Page Revision (See Manual for Details) Amended Item Symbol Min. Typ. Max. Unit Test Conditions Normal operation 50 85 mA f = 50 MHz Sleep mode 48 60 2 7 µA T a ≤ 50°C Current consumptio n* 2 Standby mode Hardware standby mode I CC* 4 25 50°C < T a Section 30 Electrical Characteristics 1361 30.4.3 Bus Timing Figure 30.29 Synchronous DRAM Basic Read Access Timing (CAS Latency 2) Figure 30.30 Synchronous DRAM Basic Write Access Timing (CAS Latency 2) 1395, 1396 Amended Positions of dotted lines have been corrected. |
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