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MCP6V06T データシート(PDF) 5 Page - Microchip Technology |
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MCP6V06T データシート(HTML) 5 Page - Microchip Technology |
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5 / 44 page  © 2008 Microchip Technology Inc. DS22093B-page 5 MCP6V06/7/8 TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS TABLE 1-4: TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 20 kΩ to VL, CL = 60 pF, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Typ Max Units Conditions CS Pull-Down Resistor (MCP6V08) CS Pull-Down Resistor RPD 35 — M Ω CS Low Specifications (MCP6V08) CS Logic Threshold, Low VIL VSS —0.3VDD V CS Input Current, Low ICSL —5— pA CS = VSS CS High Specifications (MCP6V08) CS Logic Threshold, High VIH 0.7VDD —VDD V CS Input Current, High ICSH —VDD/RPD —pA CS = VDD CS Input High, GND Current per amplifier ISS —-0.7— µA CS = VDD, VDD = 1.8V ISS —-2.3— µA CS = VDD, VDD = 5.5V Amplifier Output Leakage, CS High IO_LEAK —20— pA CS = VDD CS Dynamic Specifications (MCP6V08) CS Low to Amplifier Output On Turn-on Time tON — 11 100 µs CS Low = VSS+0.3 V, G = +1 V/V, VOUT = 0.9 VDD/2 CS High to Amplifier Output High-Z tOFF —10— µs CS High = VDD – 0.3 V, G = +1 V/V, VOUT = 0.1 VDD/2 Internal Hysteresis VHYST —0.25 — V Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C (Note 1) Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 8L-2x3 TDFN θJA —41— °C/W Thermal Resistance, 8L-4x4 DFN θJA —44— °C/W (Note 2) Thermal Resistance, 8L-SOIC θJA — 150 — °C/W Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (150°C). 2: Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias. |
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