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ISL73847SEHDEMO2Z データシート(PDF) 29 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 29 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 29
Jan 31, 2025
ISL73041SEH Datasheet
6.11 Gate Driver Outputs
The ISL73041SEH features independent source and sink driver outputs for the rise and fall time control. The
upper gate driver is the Upper Gate High (UGH) and Upper Gate Low (UGL) pins. The lower gate driver is the
Lower Gate High (LGH) and Lower Gate Low (LGL) pin. A series diode is needed on drivers without separate
source and sink pins to achieve independent turn-on/off control. This issue can be problematic for GaN FETs as
the diode's voltage drop from driver output to the FET gate impacts the FET ON-resistance. If no turn-on or
turn-off time reduction is needed, Renesas recommends inserting a 0Ω resistor anyway. In practical layout, the
Printed Circuit Board (PCB) trace length connecting the driver output to the FET gate has a parasitic inductance.
Combined with the parasitic capacitance of the FET gate, this forms a resonant loop that can cause excessive
ringing in the gate drive waveforms during turn-on and turn-off. The ringing overshoot may be large enough to
damage a GaN FET gate in a poor layout. A small amount of resistance may be required to dampen the
overshoot.
The UGx and LGx output high peak drive currents that turn on and off the FET quickly for high-frequency
applications need to minimize switching losses. The high-side driver provides up to 2A source and 4A sink peak
drive current. The low-side source and sink driver provides up to 4A source and 8A sink peak drive current.
There is a 1kΩ passive pull-down resistor on UGL to PHS and a 500Ω passive pull-down resistor on LGL to
PGND. These passive pull-down resistors prevent charge build-up on the FET gate-source capacitance when the
ISL73041SEH driver is not biased. Otherwise, both half-bridge FETs can accumulate enough Vgs from leakage
current or stray noise at the capacitive high impedance gate to turn on and cause shoot-through.
In normal operation, driver outputs respond to PWM input commands. Under disabled or fault conditions, the
driver outputs do not respond to PWM input, and the driver outputs are in either an active off (the UGL and LGL
sink drivers are on) or passive off (1kΩ pull down on UGL to PHS and 500Ω pull down on LGL to PGND)
condition. Below is a list of ISL73041SEH states where the driver outputs do not respond to PWM input
commands and their associated active or passive states.
Note: A passive off condition supersedes the active off condition.
▪ EN pin low (driver disabled): Passive Off
▪ VDD, AVCC or PVCC UVLO: Passive Off
▪ PWM = Mid level: Active Off
▪ FLT externally driven low: Active Off
▪ Over-Temperature Fault: Active Off
▪ BOOT UVLO: Passive off only at the high-side driver. The low-side driver is still active to PWM input
commands.
6.12 FLT Pin Fault Indication
The ISL73041SEH includes several fault protections to prevent the operation of the half-bridge driver in a faulted
condition. The FLT pin is an indicator of its fault status. The FLT pin is a dual-use open-drain output with external
input control. Connect a pull-up resistor from the FLT pin to AVCC. The typical value is 10kΩ. FLT internally pulls
low to indicate a fault condition when one of the following occurs:
▪ EN = 0 (driver disabled),
▪ VDD, AVCC or PVCC in UVLO, or
▪ ISL73041SEH is in an over-temperature fault condition.
Under these fault conditions, the driver outputs do not respond to PWM inputs.
You can also use the ISL73041SEH FLT pin for external control input in fault broadcasting applications where all
driver FLT pins are connected. If one driver or a controller enters a fault condition that pulls its FLT pin low, all
other ISL73041SEH drivers are disabled to prevent operation when the system detects a fault condition.



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