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ISL73847SEHDEMO2Z データシート(PDF) 8 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 8 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 8
Jan 31, 2025
ISL73041SEH Datasheet
PVCC Gate Drive Voltage
PVCC
PVCC = 4.5V = FB or with external
resistors; IOUT from 0mA to 150mA;
VDD from 4.85V to 13.2V
-55°C
4.39
4.5
4.6
V
+25°C
4.4
4.5
4.6
+125°C
4.39
4.5
4.6
+25°C
(Post Rad)
4.39
4.5
4.6
PVCC = 5.5V with external FB
resistors; IOUT from 0mA to 150mA;
VDD from 5.85V to 13.2V
-55°C
5.39
5.5
5.6
V
+25°C
5.4
5.5
5.6
+125°C
5.39
5.5
5.6
+25°C
(Post Rad)
5.39
5.5
5.6
PVCC in Pass Mode
-
VDD = 4.75V; FB = PVCC;
IOUT = 150mA
-55 to
+125°C
4.34
4.44
-
V
PVCC Dropout Voltage
-
IOUT = 150mA; VDD voltage where
PVCC drops 2% below regulation;
PVCC = 4.5V to 5.5V
-55 to
+125°C
-190
250
mV
PVCC Output Current
Limit
ILIMITP
VDD = 4.75V; FB = PVCC;
Force PVCC = 4.2V
-55 to
+125°C
190
250
350
mA
VDD to PVCC Power
Supply Rejection Ratio
PVCCPSRR
VDD = 6V + 300mVpp AC 1kHz;
PVCC = 5.5V; PVCC IOUT = 150mA
--
70
-
dB
VDD = 6V + 300mVpp AC 100kHz;
PVCC = 5.5V; PVCC IOUT = 150mA
--
30
-
Internal LDO voltage
AVCC
VDD = 4.97V; IOUT = 20mA
-55 to
+125°C
4.3
4.6
4.69
V
VDD = 5.25V to 13.2V; IOUT = 0mA
to 20mA
4.7
5.0
5.4
Dropout Voltage
-
IOUT = 20mA; VDD voltage where
AVCC drops 2% below regulation
-55 to
+125°C
--
250
mV
AVCC Output Current
Limit
ILIMITA
VDD = 4.75V;
Force AVDD = 4.5V
-55 to
+125°C
25
49
100
mA
VDD to AVCC Power
Supply Rejection Ratio
AVCCPSRR
VDD = 6V + 300mVpp AC 1kHz;
AVCC = 5V; AVCC IOUT = 20mA
--
70
-
dB
VDD = 6V + 300mVpp AC 100kHz;
AVCC = 5V; AVCC IOUT = 20mA
--
30
-
VDD Undervoltage Lockout (UVLO)
VDD UVLO Rising
Threshold
VRVDD
-
-55 to
+125°C
4.46
4.6
4.74
V
VDD UVLO Falling
Threshold
VFVDD
-
4.41
4.55
4.68
V
VDD UVLO Hysteresis
VHVDD
VRVDD - VFVDD
25
50
90
mV
Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC =2.2µF; CBOOT = 100nF to PHS;
PHS = PGND = 0V; TA= 25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across
the operating temperature range from -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with exposure
at a low dose rate of <10mrad(Si)/s. (Cont.)
Parameter
Symbol
Test Conditions
Temp.
Min[1]
Typ.[2]
Max[1]
Unit



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