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ISL73847SEHDEMO2Z データシート(PDF) 38 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 38 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 38
Jan 31, 2025
ISL73041SEH Datasheet
10. Ordering Information
11. Revision History
Part Number[1]
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
Radiation Hardness
(Total Ionizing Dose)
Package Description
(RoHS Compliant)
Package
Drawing
Carrier
Type
Temp Range
ISL73041SEHML
LDR to 75krad(Si)
16 Pad CLCC Packaged
Device (QML-V Level
Screening)
J16.A
Tray
-55 to +125°C
ISL73041SEHMX[2]
2. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of
meeting the electrical performance outlined in Electrical Specifications. The die is sourced from wafer lots that have been qualified for
Group C and Group E per MIL-PRF-38535 (Refer to R34TB0001: Renesas Radiation Hardened QML-V Equivalent Screening and QCI
Flow for more information).
Bare Die (QML-V Level
Screening)
N/A
N/A
ISL73041SEHX/SAMPLE[2][3]
3. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts
are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature
specified in this datasheet. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in this datasheet. The
/SAMPLE parts do not receive 100% screening across temperature to the electrical limits. These part types do not come with a Certificate
of Conformance.
N/A
Die
N/A
N/A
ISL73041SEHL/PROTO[3]
16 Pad CLCC Packaged
Device
J16.A
Tray
ISL73041SEHEV1Z[4]
4. Evaluation board uses the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect
(SEE) immunity.
ISL73041SEH Evaluation Board
ISL73847SEHEV2Z[4]
ISL73847SEH + ISL73041SEH Evaluation Board
ISL73847SEHDEMO2Z[4]
ISL73847SEH + ISL73041SEH Business Card Size Demonstration board with Package GaN
FETs; VIN = 12V; VOUT = 1V; IOUT = 50A; fSW = 500kHz;
Rev.
Date
Description
1.04
Jan 31, 2025
Updated the PGND and SGND pin descriptions.
Added SGND to PGND parameter spec to Abs max section.
Updated the Layout Guidelines section.
1.03
Jan 4, 2024
Updated Features bullets.
Added Dual Complimentary Low-Side GaN FET Driver section.
1.02
Jun 22, 2023
Updated Figure 14.
Updated Ordering Information table.



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