R34DS0017EU0104 Rev.1.04

Page 11

Jan 31, 2025

ISL73041SEH Datasheet

UGL Output Low Voltage

VOLUGL

ISINK = 100mA; Voltage above PHS

-55 to

+125°C

50

80

mV

UGL Gate Discharge

Resistor

RUGL

EN = 0

800

1000

1400

Ω

Lower Gate Low Output (LGL)

LGL Peak Sink Current

ILGLSNK

VDD = 4.75V; FB = PVCC;

BOOT-PHS = 4.5V;

PWM = 5V; 1µF load on LG-PGND

--

8

-

A

LGL Output Low Voltage

VOLLGL

ISINK = 100mA;

Voltage above GND

-55 to

+125°C

-27

50

mV

LGL Gate Discharge

Resistor

RLGL

EN = 0

400

500

700

Ω

Over-Temperature Protection (OTP)

Rising Thermal Shutdown

OTPR

-

-

-

160

-

°C

Falling Thermal Recovery

OTPF

-

-

-

145

-

°C

Driver Response Time to

Thermal Shutdown

-

Design simulation

-

-

45

-

µs

1. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, +125°C and at +25°C post radiation.

2. Typical values are not guaranteed.

3. UVLO for PVCC is detected on the FB pin. PVCC UVLO thresholds are set at 96.5% rising and 94% falling, typical at +25°C, of the set

PVCC voltage. PVCC UVLO thresholds production tested only at PVCC set to 5.5V.

Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC =2.2µF; CBOOT = 100nF to PHS;

PHS = PGND = 0V; TA= 25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across

the operating temperature range from -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with exposure

at a low dose rate of <10mrad(Si)/s. (Cont.)

Parameter

Symbol

Test Conditions

Temp.

Min[1]

Typ.[2]

Max[1]

Unit