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ISL73847SEHDEMO2Z データシート(PDF) 39 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 39 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 39
Jan 31, 2025
ISL73041SEH Datasheet
1.01
May 30, 2023
Updated Pin Descriptions for pin 4 and 5.
Added 86MeV results to Abs max section.
For the Quiescent Supply Current spec, updated test conditions, removed the 0V specs, and changed
the maximum spec for the 1.3kΩ from 13mA to 9mA and moved the max values to the typical column.
For the Dead Time Delay LG Falling to UG Rising spec, updated test conditions, removed the min and
max specs for the 1.3kΩ, and updated the typical from 5ns to 6.5ns.
For the Dead Time Delay UG Falling to LG Rising spec, updated test conditions, removed the min and
max specs for the 1.3kΩ, and updated the typical from 5ns to 6.5ns.
For the Dead Time Delay Match spec, updated test conditions, removed min and max limits, and
added typical of -0.2ns.
Updated test conditions and removed the max limits for the PWM Enter Mid-Level to UG Low Delay
Time, PWM Exit Mid-Level to UG High Delay Time, PWM Enter Mid-Level to LG Low Delay Time, and
PWM Exit Mid-Level to LG Rising Delay Time specs.
For the VDD Quiescent Current spec in Table 1, removed the 0V line.
Updated Figures 12, 20, 47.
Corrected title for Figures 12, 14, and 38.
Removed Figures 18 - 21.
Changed 5ns to 6.5ns in the Dead Time Control section.
Updated the Dead Time Control Resistor Setting section.
Added the Power Dissipation section.
Updated the Die and Assembly Characteristics section.
1.00
Mar 23, 2023
Initial release
Rev.
Date
Description



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