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ISL73847SEHDEMO2Z データシート(PDF) 6 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 6 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 6
Jan 31, 2025
ISL73041SEH Datasheet
3.
Specifications
3.1
Absolute Maximum Ratings
Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions can adversely impact product reliability and result in failures not covered by warranty.
3.2
Thermal Information
Parameter
Minimum
Maximum
Unit
PVCC to PGND; BOOT to PHS
-0.3
+6.5
V
VDD to SGND
-0.3
+20
V
SGND to PGND
-0.3
+0.3
V
PHS to PGND
-0.3V DC
+20
V
PHS to PGND[1]
1. Tested in a heavy ion environment at LET = 67MeV•cm2/mg at 125°C.
-
+16.5
V
PHS to PGND[2]
2. Tested in a heavy ion environment at LET = 86MeV•cm2/mg at 125°C.
-
+13.5
V
PHS to PGND (repetitive transient)
-5V (100ns)
-
V
BOOT to PGND
-0.3
+24
V
BOOT to PGND[1]
-
+21.5
V
BOOT to PGND[2]
-
+18.5
V
EN to SGND
-0.3
VDD+0.3
V
AVCC, FB, PWM, FLT, RDU, RDL to SGND
-0.3
+6.5
V
UGH, UGL
PHS-0.3
BOOT+0.3
V
LGH, LGL
GND-0.3
PVCC+0.3
V
Human Body Model (Tested per MIL-STD-883 TM3015.7)
-
5
kV
Charged Device Model (Tested per JS-002-2018)
-
1
kV
Latch-Up (Tested per JESD78E; Class 2, Level A)
-
±100
mA
Parameter
Package
Symbol
Conditions
Typical
Value
Unit
Thermal Resistance
16 Pad CLCC Package
θJA[1]
1. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features.
See TB379.
Junction to air.
37
°C/W
θJC[2]
2. For θJC, the case temp location is the center of the package underside.
Junction to case.
6.5
°C/W
Parameter
Minimum
Maximum
Unit
Maximum Junction Temperature
-
+150
°C
Storage Temperature Range
-65
+150
°C



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