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ISL73847SEHDEMO2Z データシート(PDF) 1 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 1 Page - Renesas Technology Corp

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Datasheet
R34DS0017EU0104 Rev.1.04
Page 1
Jan 31, 2025
© 2023-2025 Renesas Electronics
The ISL73041SEH is a Radiation Hardened PWM
input 12V Half Bridge GaN FET Driver designed to
drive low rDS(ON) Gallium Nitride FETs for DC/DC
switching regulators. An integrated programmable
GaN FET gate drive voltage, high-side bootstrap
switch, and strong gate drive current provide a
compact and robust GaN FET half-bridge driver.
The ISL73041SEH can interface directly to the
ISL73847SEH dual-phase PWM buck controller to
create a high-efficiency point-of-load regulator to
power many of the latest low voltage high current
FPGA and DSP digital core rails.
Applications
▪ High current DC/DC Point-of-Load (POL) for FPGA
and DSP supply rails
▪ 5V or 12V input to 1V output POL regulation
▪ GaN FET motor driver
▪ Combine with ISL73847SEH DC/DC PWM
controller and Renesas GaN FETs for a complete
DC/DC solution
Features
▪ Qualified to Renesas Rad Hard QML-V Equivalent
Screening and QCI Flow (R34TB0001EU)
• All screening and QCI is in accordance with
MIL-PRF-38535L Class-V
▪ Up to 20V bootstrap voltage half-bridge driver
▪ Programmable 4.5V to 5.5V gate drive voltage
▪ Single tri-level PWM input control
▪ Separate source and sink driver outputs
▪ High-side peak drive: 2A Sourcing, 4A Sinking
▪ Low-side peak drive: 4A Sourcing, 8A Sinking
▪ High and low side programmable dead time control
▪ Highly matched fast propagation delay: 29ns
▪ Full military temperature operation TA = -55°C to
125°C ambient range
▪ TID Rad Hard Assurance (RHA) testing
•LDR (≤ 10mrad(Si)/s): 75krad(Si)
▪ SEE Characterization (see SEE report for details)
• No DSEE with VDD = 20V or PHS = 13.5V at
LET 86MeV·cm2/mg
• No DSEE with VDD = 20V or PHS = 16.5V at
LET 67MeV·cm2/mg
• SEFI <10µm2 at 86MeV·cm2/mg
• No Half-Bridge Shoot-Through SET at LET
86MeV·cm2/mg
Figure 1. Typical Application Schematic: 2-Phase Controller + Bridge Driver + GaN FETs
for 12V Input, 1.0V Output, 50A DC/DC Converter
FLT
Half Bridge
Driver
ISL73041SEH
VFB+
VFB-
COMP
PWM1
ISEN1+
ISEN1-
ISEN2+
ISEN2-
PWM2
IMON
DROOP
VREF
SS
Half Bridge
Driver
ISL73041SEH
VBUS
VOUT
PWM
PWM
VBUS
2ph PWM Controller
ISL73847
SLOPE
FLT
FLT
ISL73041SEH
Radiation Hardened 12V Half-Bridge GaN FET Driver


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