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ISL73847SEHDEMO2Z データシート(PDF) 7 Page - Renesas Technology Corp

部品番号 ISL73847SEHDEMO2Z
部品情報  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z データシート(HTML) 7 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 7
Jan 31, 2025
ISL73041SEH Datasheet
3.3
Recommended Operating Conditions
3.4
Electrical Specifications
3.4.1
DC Electrical Specifications
Parameter
Minimum
Maximum
Unit
Ambient Temperature
-55
+125
°C
VDD Voltage
+4.75
+13.2
V
PVCC
+4.5
+5.5
V
PHS
0
+13.2
V
Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC =2.2µF; CBOOT = 100nF to PHS;
PHS = PGND = 0V; TA= 25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across
the operating temperature range from -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with exposure
at a low dose rate of <10mrad(Si)/s.
Parameter
Symbol
Test Conditions
Temp.
Min[1]
Typ.[2]
Max[1]
Unit
VDD Power Supply
Shutdown Supply Current
IDDSHDN
EN = 0V
-55 to
+125°C
-850
1200
µA
Quiescent Supply Current
IDDQ
PWM = Float; RDU = RDL = 1.3kΩ
-55 to
+125°C
-9
-
mA
PWM = Float; RDU = RDL = 10kΩ
--
6
Unloaded Operating
Current
IDDO1
UG and LG unloaded;
PWM = 500kHz at 50% 0V to 5V
-55 to
+125°C
-21
32
mA
Loaded Operating Current
IDDO2
5nF load on UG; 10nF load on LG;
PWM = 500kHz at 50% 0V to 5V
-55 to
+125°C
-55
70
mA
Bootstrap Supply
BOOT Quiescent Current
IQ_Boot
PWM = Float; BOOT-PHS = 4.5V
-55 to
+125°C
-580
650
µA
PVCC and AVCC LDOs
PVCC Feedback Voltage
VFB
Internal reference voltage
-55°C
1.188
1.2
1.212
V
+25°C
1.188
1.2
1.212
+125°C
1.188
1.2
1.212
+25°C
(Post Rad)
1.188
1.2
1.212



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