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H8SX/1663M データシート(PDF) 314 Page - Renesas Technology Corp |
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H8SX/1663M データシート(HTML) 314 Page - Renesas Technology Corp |
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314 / 1504 page ![]() Section 9 Bus Controller (BSC) Rev. 2.00 Sep. 24, 2008 Page 282 of 1468 REJ09B0412-0200 9.10.5 Basic Timing Figure 9.38 shows a basic access timing of the DRAM space. A basic bus cycle consists of four clock cycles: one precharge cycle (Tp), one row address output cycle (Tr), and two column address output cycles (Tc1 and Tc2). The RD signal is output to DRAM as an OE signal on a DRAM access. When DRAM with the EDO page mode function is in use, connect the OE signal to the OE pin of the DRAM. T p T r T c1 T c2 Address bus Row address Column address B φ RAS LUCAS LLCAS WE OE (RD) WE OE (RD) Data bus High High Read Write Data bus BS RD/ WR Figure 9.38 DRAM Basic Access Timing (RAS = 0 and CAST = 0) |
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