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SPC58EE80C3 データシート(PDF) 49 Page - STMicroelectronics

部品番号 SPC58EE80C3
部品情報  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  154 Pages
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SPC58EE80C3 データシート(HTML) 49 Page - STMicroelectronics

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DS11646 Rev 4
49/154
SPC58EEx, SPC58NEx
Electrical characteristics
66
3.12
ADC system
3.12.1
ADC input description
Figure 8 shows the input equivalent circuit for SARn and SARB channels.
Figure 8. Input equivalent circuit (Fast SARn and SARB channels)
Specifications in the following table apply to both packaged parts and Known Good Die
(KGD) parts, except where noted.
All specifications in the following table valid for the full input voltage range for the analog
inputs.
RSW1
CP2
CS
VDD
Sampling
INTERNAL CIRCUIT SCHEME
RSW1: Channel Selection Switch Impedance
RAD:
Sampling Switch Impedance
CP:
Pin Capacitance (two contributions, CP1 and CP2)
CS:
Sampling Capacitance
RCMSW: Common mode switch
RCMRL: Common mode resistive ladder
VCM:
Common mode voltage (~0.5 VDD)
CEXT: External capacitance
CP1
RAD
Channel
Selection
Common mode
switch
Common mode
resistive ladder
The above scheme can be used as approximation circuitry for external filtering definition.
VCM
RCMSW
RCMRL
CEXT
VSS_HV_ADR
Table 26. ADC pin specification
Symbol
C
Parameter
Conditions
Value
Unit
Min
Max
R20KΩ
CC D
Internal voltage reference source
impedance.
—16
30
K
Ω
ILKG
CC —
Input leakage current, two ADC
channels on input-only pin.
See IO chapter Table 11: I/O input electrical
characteristics, parameter ILKG.
IINJ1,2
SR —
Injection current on analog input
preserving functionality at full or
degraded performances.
See Operating Conditions chapter Table 5:
Operating conditions, IINJ1 and IINJ2 parameters.
CHV_ADC
SR D VDD_HV_ADV external capacitance.
See Power Management chapter Table 39: External
components integration, CADC parameter.
CP1
CC D Pad capacitance
See IO chapter Table 11: I/O input electrical
characteristics, parameter CP1.



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