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SPC58EE80C3 データシート(PDF) 28 Page - STMicroelectronics |
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SPC58EE80C3 データシート(HTML) 28 Page - STMicroelectronics |
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28 / 154 page  Electrical characteristics SPC58EEx, SPC58NEx 28/154 DS11646 Rev 4 Figure 3. I/O input electrical characteristics In the following table, in case of current injection pulses on one pad under the conditions and limits described in IINJ2 parameter in Section 3.3: Operating conditions, other pads of the same supply segment will have a drift of 4 % above the maximum Vil and 4 % below the minimum Vih limits. Similarly Vhys parameter will be decreased of 4 %. VIL VIN VIH VINTERNAL VDD VHYS (SIUL register) Table 11. I/O input electrical characteristics Symbol C Parameter Conditions Value Unit Min Typ Max TTL Vihttl SR P Input high level TTL —2 — VDD_HV_IO + 0.3 V Vilttl SR P Input low level TTL — –0.3 — 0.8 V Vhysttl CC C Input hysteresis TTL —0.3 — — V AUTOMOTIVE Vihaut(1) SR P Input high level AUTO VDD_HV_IO =5.0 V ± 10% 3.8 — VDD_HV_IO + 0.3 V Vilaut(2) SR P Input low level AUTO VDD_HV_IO =5.0 V ± 10% –0.3 — 2.2 V Vhysaut(3) CC C Input hysteresis AUTO VDD_HV_IO =5.0 V ± 10% 0.5 — — V CMOS Vihcmos SR P Input high level CMOS(1) —0.65 * VDD — VDD_HV_IO + 0.3 V |
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