SPC58EE80C3 datasheet(17/154 Pages) STMICROELECTRONICS

17 / 154 page

DS11646 Rev 4

17/154

SPC58EEx, SPC58NEx

Electrical characteristics

1. VDD_LV: allowed 1.335 V - 1.400 V for 60 seconds cumulative time at the given temperature profile. Remaining time allowed

1.260 V - 1.335 V for 10 hours cumulative time at the given temperature profile. Remaining time as defined in Section 3.3:

Operating conditions. In the range [1.26-1.33] V and if the above-mentioned cumulative times are not exceeded, the device

functionality is granted and is expected to receive a flag by the internal HVD134 monitors to warn that the regulator (internal

or external), providing the VDD_LV supply, exited the expected operating conditions. If the internal HVD134 monitors are

disabled by the application, then an external voltage monitor with equivalent thresholds measured at the device pad, has to

be implemented. Please refer to Section 3.16.3: Voltage monitors for the list of available internal monitors and to the

Reference Manual for the configurability of the monitors. In this range, the device may exceed the maximum consumptions

reported in Table 9: Device consumption.

2. VDD_LV_BD: allowed 1.450 V - 1.500 V for 60 seconds cumulative time at the given temperature profile. Remaining time

allowed 1.375 V - 1.450 V for 10 hours cumulative time at maximum TJ = 125 °C. Remaining time as defined in Section 3.3:

Operating conditions.

3. VDD_HV: allowed 5.5 V – 6.0 V for 60 seconds cumulative time at the given temperature profile, for 10 hours cumulative

time with the device in reset at the given temperature profile. Remaining time as defined in Section 3.3: Operating

conditions.

4. The maximum input voltage on an I/O pin tracks with the associated I/O supply maximum. For the injection current

condition on a pin, the voltage will be equal to the supply plus the voltage drop across the internal ESD diode from I/O pin

to supply. The diode voltage varies greatly across process and temperature, but a value of 0.3 V can be used for nominal

calculations.

5. Relative value can be exceeded if design measures are taken to ensure injection current limitation (parameter IINJ).

6. This limitation applies to pads with digital input buffer enabled. If the digital input buffer is disabled, there are no maximum

limits to the transition time.

7. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in

Section 3.8.3: I/O pad current specifications.

8. 175°C are allowed for limited time. Mission profile with passive lifetime temperature >150°C have to be evaluated by ST to

confirm that are granted by product qualification.

9. Solder profile per IPC/JEDEC J-STD-020D.

10. Moisture sensitivity per JDEC test method A112.

SPC58EE80C3 データシート(PDF) 17 Page - STMicroelectronics