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SPC58EE80C3 データシート(PDF) 84 Page - STMicroelectronics |
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SPC58EE80C3 データシート(HTML) 84 Page - STMicroelectronics |
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84 / 154 page ![]() Electrical characteristics SPC58EEx, SPC58NEx 84/154 DS11646 Rev 4 Table 42. Clamp regulator specifications Symbol C Parameter Conditions Value Unit Min Typ Max VCLAMP CC P Clamp regulator output voltage After trimming, internal regulator mode 1.17 1.21 1.32 V CC P After trimming, external regulator mode 1.24 1.28 1.39 ΔIDDCLAMP CC T Clamp regulator current variation 20 µs observation window —100 — 100 mA ICLAMPINT CC D Clamp regulator current consumption IMREG = 0 mA — — 0.7 mA Table 43. Standby regulator specifications Symbol C Parameter Conditions Value Unit Min Typ Max VSBY CC P Standby regulator output voltage After trimming, maximum load 1.02 1.06 1.26 V IDDSBY CC T Standby regulator current provided to VDD_LV domain —— — 50 mA Table 44. SMPS Regulator specifications Symbol C Parameter Conditions Value Unit Min Typ Max VDD_HV_IO SR P SMPS Regulator Supply Voltage(1) — 4.5 — 5.5 V VSMPS CC P SMPS regulator output voltage After trimming, max load 1.14 1.20 1.26 V δVSMPS CC T SMPS regulator output voltage tolerance after trimming, < 20 µs observation window -5% — +5% — FSMPS CC T SMPS regulator switching frequency — -5% 727 +5% kHz IDDSMPS CC T SMPS regulator current provided to VDD_LV domain — — — 1000 mA IDDCLAMP CC D SMPS regulator rush current sinked from VDD_HV_IO_MAIN domain during VDD_LV domain loading Power-up condition — — 400 mA ΔIDDSMPS (2) CC T SMPS regulator current variation 20 µs observation window -200 — 200 mA 1. SMPS regulator is functional in the range 2.85 V < VDD_HV_IO < 4.5 V, but at a reduced efficiency. 2. Internal schemes must be used by the application (eg frequency ramping feature enable) to ensure that incremental demands are made on the external power supply within the maximum value. Mbist/Lbist must be configured to avoid exceeding the maximum value. |
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