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SPC58EE80C3 データシート(PDF) 22 Page - STMicroelectronics |
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SPC58EE80C3 データシート(HTML) 22 Page - STMicroelectronics |
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22 / 154 page ![]() Electrical characteristics SPC58EEx, SPC58NEx 22/154 DS11646 Rev 4 3.4 Electrostatic discharge (ESD) The following table describes the ESD ratings of the device: • All ESD testing are in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits, • Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification requirements, which include the complete DC parametric and functional testing at room temperature and hot temperature, maximum DC parametric variation within 10% of maximum specification”. Table 8. ESD ratings Parameter C Conditions Value Unit ESD for Human Body Model (HBM)(1) T All pins 2000 V ESD for field induced Charged Device Model (CDM)(2) T All pins 500 V T Corner Pins 750 V 1. This parameter tested in conformity with ANSI/ESD STM5.1-2007 Electrostatic Discharge Sensitivity Testing. 2. This parameter tested in conformity with ANSI/ESD STM5.3-1990 Charged Device Model - Component Level. |
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