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SPC58EE80C3 データシート(PDF) 62 Page - STMicroelectronics |
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SPC58EE80C3 データシート(HTML) 62 Page - STMicroelectronics |
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62 / 154 page ![]() Electrical characteristics SPC58EEx, SPC58NEx 62/154 DS11646 Rev 4 SNRSE150(10) CC P Signal to noise ratio in single ended mode 150 ksps output rate(11) 4.0 < VDD_HV_ADV <5.5 VDD_HV_ADR_D = VDD_HV_ADV GAIN = 1 TJ < 150 °C 74 — — dBFS T 4.0 < VDD_HV_ADV <5.5 VDD_HV_ADR_D = VDD_HV_ADV GAIN = 2 TJ < 150 °C 71 — — 4.0 < VDD_HV_ADV <5.5 VDD_HV_ADR_D = VDD_HV_ADV GAIN = 4 TJ < 150 °C 68 — — 4.0 < VDD_HV_ADV <5.5 VDD_HV_ADR_D = VDD_HV_ADV GAIN = 8 TJ < 150 °C 65 — — D 4.0 < VDD_HV_ADV <5.5 VDD_HV_ADR_D = VDD_HV_ADV GAIN = 16 TJ < 150 °C 62 — — ΔSNR165C CC C 165 °C Signal to noise ratio impact Any GAIN 150 °C < TJ <165 °C –9 — — dBFS ΔSNRINJ2 CC T TUE degradation addition, due to current injection in IINJ2 range. See Operating Conditions chapter Table 5, IINJ2 parameter(12) —— –9 dBFS SFDR CC P Spurious free dynamic range GAIN = 1 60 — — dBc CGAIN = 2 60 — — CGAIN = 4 60 — — CGAIN = 8 60 — — D GAIN = 16 60 — — ZDIFF CC D Differential input impedance (fADCD_M = 16 MHz) GAIN = 1 900 1125 1350 k Ω D GAIN = 2 550 700 900 D GAIN = 4 250 350 450 D GAIN = 8 180 225 270 D GAIN = 16 180 225 270 Table 29. SDn ADC electrical specification (continued) Symbol C Parameter Conditions Value Unit Min Typ Max |
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