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SPC58EE80C3 データシート(PDF) 91 Page - STMicroelectronics

部品番号 SPC58EE80C3
部品情報  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  154 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC58EE80C3 データシート(HTML) 91 Page - STMicroelectronics

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DS11644 Rev 4
91/154
SPC58EEx, SPC58NEx
Electrical characteristics
91
All the Flash operations require the presence of the system clock for internal
synchronization. About 50 synchronization cycles are needed: this means that the timings of
the previous table can be longer if a low frequency system clock is used.
11. Timings guaranteed by design.
12. AIC is done using system clock, thus all timing is dependent on system frequency and number of wait states. Timing in the
table is calculated at max frequency.
Table 48. Flash memory Life Specification
Symbol
Characteristics(1) (2)
1. Program and erase cycles supported across specified temperature specifications.
2. It is recommended that the application enables the core cache memory.
Value
Unit
Min
C
Typ
C
NCER16K 16 KB CODE Flash endurance
10
100
— Kcycles
NCER32K 32 KB CODE Flash endurance
10
100
— Kcycles
NCER64K 64 KB CODE Flash endurance
10
100
— Kcycles
NCER128K 128 KB CODE Flash endurance
1
100
— Kcycles
NCER256K
256 KB CODE Flash endurance
1
100
— Kcycles
256 KB CODE Flash endurance(3)
3. 10K cycles on 4-256 KB blocks is not intended for production. Reduced reliability and degraded erase time
are possible.
10
100
— Kcycles
NDER64K 64 KB DATA EEPROM Flash endurance
250
— Kcycles
NDER16K 16 KB HSM DATA EEPROM Flash endurance
100
— Kcycles
tDR1k
Minimum data retention Blocks with 0 - 1,000 P/E
cycles
25
Years
tDR10k
Minimum data retention Blocks with 1,001 - 10,000
P/E cycles
20
Years
tDR100k
Minimum data retention Blocks with 10,001 - 100,000
P/E cycles
15
Years
tDR250k
Minimum data retention Blocks with 100,001 -
250,000 P/E cycles
10
Years



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