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SPC58EE80C3 データシート(PDF) 88 Page - STMicroelectronics |
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SPC58EE80C3 データシート(HTML) 88 Page - STMicroelectronics |
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88 / 154 page ![]() Electrical characteristics SPC58EEx, SPC58NEx 88/154 DS11644 Rev 4 3.17 Flash memory The following table shows the Wait State configuration. The following table shows the Program/Erase Characteristics. Table 46. Wait State configuration APC RWSC Frequency range (MHz) 000(1) 1. STD pipelined, no address anticipation. 0f<30 1f<60 2f<90 3f<120 4f<150 5f<180 100(2) 2. No pipeline (STD + 1 Tck). 0f<30 1f<60 2f<90 3f<120 4f<150 5f<180 001(3) 3. Pipeline with 1 Tck address anticipation. 255<f<80 3 55<f<120 4 55<f<160 5 55<f<180 Table 47. Flash memory program and erase specifications Symbol Characteristics(1)(2) Value Unit Typ(3) C Initial max Typical end of life(4) Lifetime max(5) C 25 °C (6) All temp (7) C < 1 K cycles < 250 K cycles tdwprogram Double Word (64 bits) program time EEPROM (partitions 2, 3, 4) [KGD] 55 C 130 — — 140 650 C µs tpprogram Page (256 bits) program time 76 C 240 — — 255 1000 C µs |
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