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SPC58EE80C3 データシート(PDF) 105 Page - STMicroelectronics |
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SPC58EE80C3 データシート(HTML) 105 Page - STMicroelectronics |
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105 / 154 page ![]() DS11646 Rev 4 105/154 SPC58EEx, SPC58NEx Electrical characteristics 128 4tSDC CC D SCK duty cycle(6) SCK drive strength Very strong 0 pF 1/2tSCK –2 1/2tSCK +2 ns Strong 0 pF 1/2tSCK –2 1/2tSCK +2 Medium 0 pF 1/2tSCK –5 1/2tSCK +5 PCS strobe timing 5tPCSC CC D PCSx to PCSS time(7) PCS and PCSS drive strength Strong 25 pF 16.0 — ns 6tPASC CC D PCSS to PCSx time(7) PCS and PCSS drive strength Strong 25 pF 16.0 — ns SIN setup time 7tSUI CC D SIN setup time to SCK CPHA = 0(8) SCK drive strength Very strong 25 pF 25 – (P(9) ×tSYS(4))— ns Strong 50 pF 31 – (P(9) ×tSYS(4))— Medium 50 pF 52 – (P(9) ×tSYS(4))— SIN setup time to SCK CPHA = 1(8) SCK drive strength Very strong 25 pF 25.0 — ns Strong 50 pF 31.0 — Medium 50 pF 52.0 — SIN hold time 8tHI CC D SIN hold time from SCK CPHA = 0(8) SCK drive strength Very strong 0 pF –1 + (P(9) ×tSYS(4))— ns Strong 0pF –1+(P(9) ×tSYS(4))— Medium 0 pF –1 + (P(9) ×tSYS(4))— SIN hold time from SCK CPHA = 1(8) SCK drive strength Very strong 0 pF –1.0 — ns Strong 0 pF –1.0 — Medium 0 pF –1.0 — Table 56. DSPI CMOS master modified timing (full duplex and output only) MTFE = 1, CPHA = 0 or 1 (continued) # Symbol C Characteristic Condition Value(1) Unit Pad drive(2) Load (CL)Min Max |
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