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H8SX/1663R データシート(PDF) 241 Page - Renesas Technology Corp

部品番号 H8SX/1663R
部品情報  Renesas 32-Bit CISC Microcomputer H8SX Family / H8SX/1600 Series
PDF  1504 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H8SX/1663R データシート(HTML) 241 Page - Renesas Technology Corp

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Section 9 Bus Controller (BSC)
Rev. 2.00 Sep. 24, 2008 Page 209 of 1468
REJ09B0412-0200
Bit
Bit Name
Initial
Value
R/W
Description
11
OEE
0
R/W
OE Output Enable
The
OE signal is output when DRAM with the EDO
page mode is connected, whereas the CKE signal is
output when SDRAM is connected.
0:
OE/CKE signal output disabled (the OE/CKE pin can
be used as an I/O port)
1:
OE/CKE signal enabled
10
RAST
0
R/W
RAS Assertion Timing Select
Selects whether the
RAS signal is asserted at the rising
edge or falling edge of the B
φ signal in the Tr cycle
during a DRAM access. The relationship between this
bit and
RAS assertion timing is shown in figure 9.4.
When SDRAM is used, the setting of this bit does not
affect operation.
0: RAS signal is asserted at the falling edge of the Bf
signal in the Tr cycle
1: RAS signal is asserted at the rising edge of the Bf
signal in the Tr cycle
9
0
R
Reserved
The initial value should not be changed.
8
CAST
0
R/W
Column Address Output Cycle Count Select
Selects whether the number of column address output
cycles is two or three during a DRAM access.
When SDRAM is used, the setting of this bit does not
affect operation.
0: Column address is output for two cycles
1: Column address is output for three cycles
7
BE
0
R/W
Burst Access Enable
Enables or disables a burst access to the
DRAM/SDRAM. The DRAM/SDRAM is accessed in
high-speed page mode. When DRAM with the EDO
page mode is used, connect the
OE signal of this LSI to
the
OE signal of DRAM.
0: DRAM/SDRAM is accessed with full access
1: DRAM/SDRAM is accessed in high-speed page
mode



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